Stacked device package for peripheral and center device pad layout device

ABSTRACT

An assembly method is disclosed that includes providing a substrate, securing a first semiconductor device on a first surface thereof, and superimposing at least a second semiconductor device at least partially over the first semiconductor device is disclosed. An outer peripheral portion of the second semiconductor device overhangs both the first semiconductor device and the substrate. Discrete conductive elements are placed between the outer peripheral portion of the second semiconductor device and a second surface of the substrate. Intermediate portions of the discrete conductive elements pass outside of a side surface of the substrate. Assemblies and packaged semiconductor devices that are formed in accordance with the method are also disclosed.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the packaging of electronic componentssuch as integrated circuits or other electronic devices. In particular,this invention relates to a stacked semiconductor device package whereina substrate of the stacked semiconductor package is smaller than atleast one semiconductor device of the stacked semiconductor package.

2. State of the Art

In order to conserve the amount of surface area, or “real estate,”consumed on a carrier substrate, such as a circuit board, bysemiconductor devices connected thereto, various types of increaseddensity packages have been developed. Among these various types ofpackages is the so-called “multi-chip module” (MCM). Some types ofmulti-chip modules include assemblies of semiconductor devices that arestacked one on top of another. The amount of surface area on a carriersubstrate that may be saved by stacking semiconductor devices is readilyapparent; a stack of semiconductor devices consumes roughly the sameamount of real estate on a carrier substrate as a single, horizontallyoriented semiconductor device or semiconductor device package.

Due to the disparity in processes that are used to form different typesof semiconductor devices (e.g., the number and order of various processsteps), the incorporation of different types of functionality into asingle semiconductor device has proven very difficult to actually reduceto practice. Even in cases where semiconductor devices that carry outmultiple functions can be fabricated, multi-chip modules that includesemiconductor devices with differing functions (e.g., memory, processingcapabilities, etc.) are often much more desirable since the separatesemiconductor devices may be fabricated independently and laterassembled with one another much more quickly and cost-effectively (e.g.,lower production costs due to higher volumes and lower failure rates).

Multi-chip modules may also contain a number of semiconductor devicesthat perform the same function, effectively combining the functionalityof all of the semiconductor devices thereof into a single package.

An example of a conventional, stacked multi-chip module includes acarrier substrate, a first, larger semiconductor device secured to theeven larger carrier substrate, and a second, smaller semiconductordevice positioned over and secured to the first semiconductor device.The second, smaller semiconductor device does not overlie bond pads ofthe first semiconductor device and, thus, the second semiconductordevice does not cover bond wires that electrically connect bond pads ofthe first semiconductor device to corresponding contacts or terminals ofthe carrier substrate. Thus, the carrier substrate must be even largerthan the first, larger semiconductor device for electrical connectionthereto. Such a multi-chip module is disclosed and illustrated in U.S.Pat. No. 6,212,767, issued to Tandy on Apr. 10, 2001 (hereinafter “the'767 Patent”). Notably, since sizes of the semiconductor devices of sucha multi-chip module must continue to decrease as they are positionedincreasingly higher on the stack, the obtainable heights of suchmulti-chip-modules become severely limited.

Another example of a conventional multi-chip module is described in U.S.Pat. No. 5,323,060, issued to Fogal et al. on Jun. 21, 1994 (hereinafter“the '060 Patent”). The multi-chip module of the '060 Patent includes acarrier substrate with semiconductor devices disposed thereon in aChip-On-Board (“COB”) stacked arrangement. The individual semiconductordevices of each multi-chip module may be the same size or differentsizes, with upper semiconductor devices being either smaller or largerthan underlying semiconductor devices. Adjacent semiconductor devices ofeach of the multi-chip modules disclosed in the '060 Patent are securedto one another with an adhesive layer. The thickness of each adhesivelayer well exceeds the loop heights of wire bonds protruding from asemiconductor device upon which that adhesive layer is to be positioned.Accordingly, the presence of each adhesive layer prevents the back sideof an overlying, upper semiconductor device from contacting bond wiresthat protrude from an immediately underlying, lower semiconductor deviceof the multi-chip module. The carrier substrate is larger than thesemiconductor devices, and the bond wires are bonded to the carriersubstrate on regions peripheral to the stacked semiconductor devices. Itdoes not appear that the inventors named on the '060 Patent wereconcerned with the size of the carrier substrate or the length of thebond wires. Thus, the multi-chip modules of the '060 Patent may have anundesirably large foot print and undesirably long bond wires due to theperipheral wire bond connections. A multi-chip module having a largefoot print may restrict the routing space for external circuitry, forexample a printed circuit board. Long bond wires result in morepotential for interwire contact and shorting, and more inductance.

Other suitable techniques used for bonding and electrically connecting asemiconductor device to a substrate are flip-chip attachment andBoard-On-Chip (“BOC”) assembly.

Flip-chip attachment generally consists of attaching an active surfaceof a semiconductor device to a substrate with a plurality of conductivebumps therebetween. Each conductive bump must align and correspond withrespective bond pads on the substrate and the semiconductor device toprovide electrical interconnection therebetween. The semiconductordevice is bonded to the substrate by reflowing the conductive bumps,after which an underfill material is typically disposed between thesemiconductor device and the substrate for environmental protection andto enhance the attachment of the semiconductor device to the substrate.

Turning to the BOC assembly, the semiconductor device may be attached tothe surface of a substrate in a face down orientation (with its activesurface and bond pads down with respect to the circuit board). In thisorientation, the active surface of the device is adhesively attached toa portion of the substrate having one or more wire bonding openingstherein, so that bond wires can extend through the opening from bondpads on the substrate to bond pads on the active surface of the device.A bond wire is then discretely attached to each bond pad on thesemiconductor device and extends to a corresponding bond pad on thesubstrate. The bond wires are generally attached through one of threeindustry-standard wire bonding techniques: ultrasonic bonding, using acombination of pressure and ultrasonic vibration bursts to form ametallurgical cold weld; thermocompression bonding, using a combinationof pressure and elevated temperature to form a weld; and thermosonicbonding, using a combination of pressure, elevated temperature, andultrasonic vibration bursts. An encapsulant is typically used to coverthe bond wires to prevent contamination. For an exemplary BOC assembly,see U.S. Pat. No. 5,719,440, issued to Moden on Feb. 17, 1998, andassigned to the assignee of the present invention, which discloses thedevice adhesively attached face (active surface) down to a substratewith wire bonding through an opening in the substrate.

This face down semiconductor device orientation is advantageous byallowing shorter wire bonds. However, a conventional multi-chip modulehaving a first semiconductor device on a substrate in a BOC assemblyincludes a second semiconductor device stacked thereover and a carriersubstrate larger than both the first semiconductor device and the secondsemiconductor device. Bond wires electrically connecting the secondsemiconductor device and the carrier substrate are bonded to the carriersubstrate on regions peripheral to the stacked semiconductor devices.For example, see U.S. Pat. No. 6,472,736 issued to Yeh et al. on Oct.29, 2002.

In view of the foregoing, it appears that a method for forming stackedsemiconductor device assemblies which enables the use of shorter bondwires and a substrate smaller relative to the semiconductor deviceswould be useful.

BRIEF SUMMARY OF THE INVENTION

The present invention, in a number of exemplary embodiments, includessemiconductor device assemblies, as well as a method for assemblingsemiconductor devices in a stacked arrangement.

In one aspect of the present invention, a semiconductor device assemblyincludes a substrate having a first surface, a second, opposing surface,and at least one side surface adjacent to the first surface and thesecond surface. A first semiconductor device is disposed on the firstsurface of the substrate, and a second semiconductor device ispositioned over the first semiconductor device. An active surface of thesecond semiconductor device faces the first semiconductor device, and aplurality of discrete conductive elements is operably coupled to thesecond semiconductor device active surface and the substrate secondsurface. At least a portion of some of the second plurality of discreteconductive elements extend beyond the at least one side surface of thesubstrate.

Portions of the active surface of the second semiconductor device mayoverhang both the first semiconductor device and the substrate. Theperimeter of the second semiconductor device active surface may belonger than the perimeter of a surface of the first semiconductor deviceand of the first surface of the substrate. In one exemplary embodiment,the second semiconductor device active surface may have a surface arealarger than either a surface area of a surface of the firstsemiconductor device or a surface area of the first surface of thesubstrate.

The first semiconductor device may be attached to the substrate with theactive surface facing the substrate or with the active surface facingthe second semiconductor device. Electrical communication between thefirst semiconductor device and the substrate may be established in theform of discrete conductive elements extending through a slot in thesubstrate, conductive bumps positioned therebetween, discrete conductiveelements extending from the active surface of the first semiconductordevice and the first surface of the substrate, or using an interposer.The first semiconductor device may be positioned with the active surfacefacing the substrate, with portions of the active surface overhangingthe substrate. Discrete conductive elements may extend past the outerperiphery of the substrate and attach to the second, opposing surface ofthe substrate.

In another exemplary embodiment, a semiconductor device assemblyincludes a central semiconductor device, positioned between the firstsemiconductor device and the second semiconductor device. An activesurface of the central semiconductor device may face the firstsemiconductor device, or face the second semiconductor device. Spacersmay separate the semiconductor devices, allowing clearance for bondwires connected thereto. Electrical communication between the centralsemiconductor device and the substrate may be established in the form ofdiscrete conductive elements extending directly thereto, or throughintermediate conductive elements on the first semiconductor device.

Once the semiconductor devices of such an assembly have been assembledwith one another and electrically connected with a substrate or with oneanother, the assembly may be packaged by encapsulation as known in theart using, for example, transfer molding, injection molding, pot moldingor stereolithographic techniques. The encapsulation may fully cover aback side surface of the second semiconductor device, or partially coverthe back side surface of the second semiconductor device, leavingportions of the back side surface of the second semiconductor deviceexposed.

One embodiment of a method for forming an assembly according to thepresent invention includes providing a substrate including a firstsurface, a second, opposing surface, and at least one side surfaceadjacent the first surface and the second surface, securing a firstsemiconductor device to the first surface of the substrate,superimposing a second semiconductor device including an active surfaceover the first semiconductor device, the active surface of the secondsemiconductor device facing the substrate, wherein an outer peripheralportion of the second semiconductor device including bond padspositioned thereon overhangs the substrate, and placing a plurality ofdiscrete conductive elements between the bond pads and the secondsurface of the substrate with intermediate portions of the discreteconductive elements passing outside the at least one side surface of thesubstrate.

Other features and advantages of the present invention will becomeapparent to those of skill in the art through consideration of theensuing description, the accompanying drawings and the appended claims.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The foregoing and other advantages of the invention will become apparentupon reading the following detailed description and upon reference tothe drawings in which:

FIGS. 1A through 12B are cross-sectional views of schematicrepresentations of various exemplary embodiments of an assembly of thepresent invention;

FIGS. 13 and 14 are schematic representations of semiconductor devicesof an assembly of the present invention; and

FIG. 15 is a block diagram of an electronic system, in accordance withan embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

As will be appreciated by those of ordinary skill in the art, thepresent invention contemplates a stacked device package wherein anactive surface of at least one semiconductor device of the stackeddevice package has an outer periphery extending laterally beyond theouter periphery of a surface of a substrate of the stacked semiconductorpackage. Further, the active surface of the at least one semiconductordevice may be oriented facing the substrate. The at least onesemiconductor device may include peripherally located bond pads that arewire bonded to the substrate. At least another semiconductor device maybe positioned between the substrate and the at least one semiconductordevice. Such a configuration may provide a stacked device package with asmaller package size than a conventional stacked device package having asemiconductor device of a size similar to that of the at least onesemiconductor device. The stacked device package of the presentinvention may include a substrate having a small surface area that doesnot restrict the routing space on external circuitry, for example aprinted circuit board. The footprint of solder balls for electricallyconnecting the package to the external circuitry may conform to standardsizes and configurations, for example a Joint Electronic DeviceEngineering Council (JEDEC) standard. Additionally, the small foot printmay enable a single routing layer design to be employed on the printedcircuit board.

The discrete conductive elements, such as bond wires, used toelectrically connect the semiconductor devices and substrate of thestacked device package of the present invention may be shorter than thebond wires required to connect a stacked device package having a COBconfiguration. Shorter bond wires may be preferable as exhibiting asmaller inductance value compared to longer bond wires. A stacked devicepackage of the present invention may be manufactured and packaged usingexisting equipment. The stacked device package of the present inventionenables the length of traces on the semiconductor devices to be matched.There is a benefit to matching trace length when double data rate (DDR)memory is used. In DDR the command and address signals are synchronizedwith the clock; therefore, it is important to match the length of thesetraces to match signal propagation delays.

In one exemplary embodiment of the present invention, FIG. 1A shows across-sectional view of an exemplary semiconductor device package 125 ofthe present invention. The semiconductor device package 125 includes asemiconductor device assembly 101. In said assembly 101, a firstsemiconductor device 130 is attached to the first surface 102 of asubstrate 100. The first semiconductor device 130 includes an activesurface 132 facing the first surface 102 of the substrate 100. As usedherein, the term “semiconductor device” includes, for example, asemiconductor device of silicon, gallium arsenide, indium phosphide orother semiconductive material configured as a processor, logic, memoryor other function, wherein integrated circuitry is fabricated on anactive surface of the device while part of a wafer or other bulksemiconductor substrate that is later “singulated” to form a pluralityof individual semiconductor dice.

The substrate 100 may be any type of substrate or interposer. Any typeof substrate, such as a circuit board, a semiconductor device, and thelike, in assemblies and assembly methods incorporating teachings of thepresent invention are within the scope of the present invention. Thesubstrate 100 may be formed from silicon, glass, ceramic, an organicmaterial (e.g., FR-4 or FR-5 resin laminate), metal (e.g., copper,aluminum, etc.), or any other suitable material. The first semiconductordevice 130 may include integrated circuitry therein and bond pads 134(FIGS. 1A and 1B) located substantially centrally in one or more rows onthe active surface 132 thereof An exemplary embodiment of asemiconductor device 30 having bond pads 34 located substantiallycentrally in one row is depicted in FIG. 13.

Returning to FIG. 1A, the first semiconductor device 130 may be attachedto the substrate 100 with any suitable die attach material 80, such as aquantity of an appropriate thermoset resin, a quantity of pressuresensitive adhesive, an adhesive-coated film or tape, or any othersuitable adhesive. The first semiconductor device 130 may be alignedsuch that centrally located bond pads 134 are exposed through a centralslot 106 of the substrate 100.

A second semiconductor device 140 with its active surface 142 facing thefirst semiconductor device 130 is attached to a back side surface 133 ofthe first semiconductor device 130. The second semiconductor device 140may be attached using the same or another die attach material 80. Thesecond semiconductor device 140 may include integrated circuitry thereinand bond pads 144 located substantially peripherally in one or more rowson the active surface 142 thereof. An exemplary embodiment of asemiconductor device 40 having bond pads 44 located substantiallyperipherally is depicted in FIG. 14. Returning to FIG. 1A, an outerperiphery 145 of the second semiconductor device 140 extends beyond anouter periphery 135 of the first semiconductor device 130. The secondsemiconductor device 140 may be aligned such that the peripherallylocated bond pads 144 are exposed, overhanging both the firstsemiconductor device 130 and the substrate 100.

For example, the second semiconductor device active surface 142 may havea surface area larger than both the surface area of the firstsemiconductor device back side surface 133 and the surface area of thesubstrate first surface 102. Therefore, the outer periphery 145 of thesecond semiconductor device 140 is larger than both the outer periphery135 of the first semiconductor device 130 and the outer periphery 105 ofthe substrate 100. A semiconductor device package 125 including a secondsemiconductor device 140 having four sides 143 adjacent the activesurface 142 wherein one, two, three, or four of the four sides 143overhang both the first semiconductor device 130 and the substrate 100is within the scope of the present invention.

Discrete conductive elements 110, depicted as bond wires, are formed orplaced by a suitable method, such as using a wire bond capillary betweenbond pads 134 of first semiconductor device 130 and correspondingcontact areas of a second surface 104 of the substrate 100. Discreteconductive elements 110 may comprise the illustrated bond wires,tape-automated bond (TAB) elements comprising traces on a flexibledielectric film, other thermocompression bonded leads, or other suitabletypes of conductive elements. Discrete conductive elements 120 extendfrom bond pads 144 of the second semiconductor device 140, past outsidefaces 103 of the substrate 100, to corresponding contact areas of asecond surface 104 of substrate 100. The outside faces 103 of thesubstrate 100 comprise an outer periphery 105 of the substrate 100, andportions of the discrete conductive elements 120 extend beyond the outerperiphery of the substrate 100 toward the second semiconductor devicebond pads 144. Interconnect bumps 90 are operably coupled to the secondsurface 104 of the substrate 100, enabling electrical connection toexternal circuitry (not shown).

Once bond pads 134, 144 of the semiconductor devices 130, 140 are incommunication with their corresponding contact areas of the substrate100, a protective encapsulant 160 maybe placed over all or part of thesemiconductor device assembly 101, including the substrate 100, firstsemiconductor device 130, and second semiconductor device 140. Inparticular, vulnerable components in the semiconductor device assembly,such as the bond wires 110, 120 and exposed portions of the activesurface 142 of the second semiconductor device 140 are preferably sealedwith a protective encapsulant 160. FIG. 1A shows the semiconductordevice package 125 including full, over-molded encapsulation, with aprotective encapsulant 160 over part of substrate 100, firstsemiconductor device 130, and second semiconductor device 140. FIG. 1Bshows a semiconductor device package 126 having a protective encapsulant170 over part of the semiconductor device assembly 101, including partof the substrate 100, first semiconductor device 130, and part of secondsemiconductor device 140. The encapsulation is flanged, and part of theback side of the second semiconductor device 140 is exposed in thesemiconductor device package 126 of FIG 1B.

By way of example only, the protective encapsulant 160, 170 may comprisea pot or transfer molded package, as shown in FIGS. 1A and 1B, astereolithographically fabricated package, a glob top type overcoat, orother suitable packaging. Of course, any suitable materials andprocesses may be used to form the protective encapsulant 160, 170. Inthe molded package example, protective encapsulant 160 may be formedfrom a transfer molding compound (e.g., a two-part siliconparticle-filled epoxy) using known transfer molding processes, which mayemploy thermoset resins or thermoplastic polymers, or pot-molded using athermosetting resin or an epoxy compound. In the stereolithographyexample, the protective encapsulant 160, 170 may comprise a plurality ofat least partially superimposed, contiguous, mutually adhered materiallayers. For example, each layer may be formed by selectively curing(e.g., with a UV laser) regions of a layer of photocurable (e.g., UVcurable) material, as known in the stereolithography art. When theprotective encapsulant 160, 170 is a glob top, suitable glob topmaterials (e.g., epoxy, silicone, silicone-carbon resin, polyimide,polyurethane, etc.) may be dispensed, as known in the art, to formprotective encapsulant 160, 170.

FIG. 2A depicts another embodiment of the present invention. Asemiconductor device assembly 201 includes two stacked semiconductordevices. A first semiconductor device 230 is attached to a substrate 200with its active surface 232 facing away from the substrate 200. A spacer85 separates the active surface 232 of the first semiconductor device230 from an active surface 242 of a second semiconductor device 240stacked thereon. The spacer 85 may comprise any suitable material, suchas dielectric-coated silicon (which may be cut from scrapped dice) orpolyimide film. The substrate 200, the first semiconductor device 230,the spacer 85, and the second semiconductor device 240 may be attachedusing a die attach material 80. The second semiconductor device activesurface 242 may have an outer periphery 245 larger than an outerperiphery of the first semiconductor device 230. The secondsemiconductor device 240 may be aligned such that bond pads 244,peripherally located thereon, are exposed, overhanging the spacer 85,the first semiconductor device 230, and the substrate 200.

Discrete conductive elements 210 extend from the active surface 232 ofthe first semiconductor device 230 to a first surface 202 of thesubstrate 200. As shown in FIGS. 2A and 2B, through-hole vias 207 mayconductively connect the first surface 202 of the substrate 200 and asecond surface 204 of the substrate 200. The through-hole vias 207 maybe operably connected with interconnect bumps 90, enabling electricalconnection to external circuitry (not shown). Discrete conductiveelements 220 extend from the peripherally located second semiconductordevice bond pads 244, past outside faces 203 of the substrate 200, tocorresponding contact areas of the second surface 204 of substrate 200.The contact areas may be operably connected with the interconnect bumps90.

A protective encapsulant 260 may be placed over substantially all of thesemiconductor device assembly 201, as shown in FIG. 2A, formingsemiconductor package 225. Alternatively, a protective encapsulant 270may be placed over part of the semiconductor device assembly 201, asshown in FIG. 2B, forming semiconductor package 226.

FIGS. 3A and 3B depict additional embodiments of the present invention.A semiconductor device assembly 301 includes two stacked semiconductordevices. A first semiconductor device 330 is attached to a substrate 300in a flip-chip configuration, with conductive bumps 60 disposedtherebetween. The first semiconductor device 330 includes an activesurface 332 facing a first surface 302 of the substrate 300. Theconductive bumps 60 are preferably shaped as balls, but may be shaped aspillars, columns, and/or studs. The conductive bumps 60 may be formed ofany known conductive material or alloy thereof, such as solder, lead,tin, copper, silver and/or gold, as well as of conductive polymersand/or conductive composites. The conductive bumps 60 may include a corehaving layers thereon utilizing such materials and/or alloys thereof. Assuch, the conductive bumps 60 act as electrical interconnections betweenthe first semiconductor device 330 and the substrate 300. In addition,the previously set forth interconnect bumps 90 may have the samephysical and electrical characteristics as the conductive bumps 60. Theconductive bumps 60 may be operably coupled to interconnect bumps 90through vias 307, and, if desired or required, a redistribution layer(RDL) extending over a surface of the substrate 300 or redistributiontraces extending therewithin. The RDL comprises a plurality ofconductive traces 308 extending from contact locations on a surface toredistribute the contact locations to another layout.

A dielectric filler material 83 may fill the gap between the substrate300 and the first semiconductor device 330. The filler material 83 maybe applied by employing methods of injecting, dispensing or flowing afiller material 83, or by any other suitable method. For example, suchmethods may include applying the filler material 83 in the gap betweenthe first semiconductor device 330 and the substrate 300 and allowingthe filler material 83 to fill the gap by capillary action and/orpressure flow. Although the filler material 83 is not required, it ispreferred so as to protect the conductive bumps 60 from the environment.

A second semiconductor device 340 with its active surface 342 facing thefirst semiconductor device 330, is attached to a back side surface 333(not shown) of the first semiconductor device 330 using a die attachmaterial 80. The second semiconductor device 340 may be aligned suchthat bond pads 344, peripherally located thereon, are exposed,overhanging the first semiconductor device 330, and the substrate 300.Discrete conductive elements 320 extend from the peripherally locatedsecond semiconductor device bond pads 344, past outside faces 303 of thesubstrate 300, to corresponding contact areas of a second surface 304 ofsubstrate 300. The second surface 304 of the substrate 300 opposes thefirst surface 302 of the substrate 300.

Once the semiconductor devices of such an assembly have been assembledwith one another and electrically connected with the substrate or withone another, the assembly may be packaged by encapsulation as known inthe art using, for example, transfer molding, injection molding, potmolding or stereolithographic techniques. A protective encapsulant 360may be placed over substantially all of the semiconductor deviceassembly 301, as shown in FIG. 3A, forming semiconductor package 325.Alternatively, a protective encapsulant 370 may be placed over part ofthe semiconductor device assembly 301, as shown in FIG. 3B, formingsemiconductor package 326.

FIGS. 4A and 4B depict additional embodiments of the present invention.A semiconductor device assembly 401 includes three stacked semiconductordevices. A first semiconductor device 430 is attached to a substrate 400with its active surface 432 facing away from the substrate 400 in a COBconfiguration. A first spacer 85 separates the active surface 432 of thefirst semiconductor device 430 from a back side surface 439 of a second,central semiconductor device 431 stacked thereon in a COB configuration.The separation enables discrete conductive elements 410 to extend fromthe active surface 432 of the first semiconductor device 430 to a firstsurface 402 of the substrate 400. A second spacer 86 separates an activesurface 438 of the second semiconductor device 431 from an activesurface 442 of a third semiconductor device 440 stacked thereon. Thethird semiconductor device 440 may be aligned such that bond pads 444,peripherally located thereon, are exposed, overhanging the firstsemiconductor device 430, the second semiconductor device 431, and thesubstrate 400. Discrete conductive elements 420 extend from theperipherally located third semiconductor device bond pads 444, pastoutside faces 403 of the substrate 400, to corresponding contact areasof a second surface 404 of substrate 400. The second surface 404 of thesubstrate 400 opposes the first surface 402 of the substrate 400.

A protective encapsulant 460 may be placed over substantially all of thesemiconductor device assembly 401, as shown in FIG. 4A, formingsemiconductor package 425. Alternatively, a protective encapsulant 470may be placed over part of the semiconductor device assembly 401, asshown in FIG. 4B, forming semiconductor package 426.

FIGS. 5A and 5B depict additional embodiments of the present invention.A semiconductor device assembly 501 includes three stacked semiconductordevices. A first semiconductor device 530 is attached to a first surface502 of a substrate 500 in a BOC configuration. The first semiconductordevice 530 includes an active surface 532 facing the first surface 502of the substrate 500. A second semiconductor device 531 is attached to aback side surface 533 of the first semiconductor device 530 in a COBconfiguration. A back side surface 539 of the second semiconductordevice 531 faces the first semiconductor device 530. A spacer 85 on anactive surface 538 of the second semiconductor device 531 separates anactive surface 542 of a third semiconductor device 540 from the activesurface 538 of the second semiconductor device 531.

The third semiconductor device 540 may be aligned such that bond pads544, peripherally located thereon, are exposed, overhanging the firstsemiconductor device 530, the second semiconductor device 531, and thesubstrate 500. Discrete conductive elements 520 extend from theperipherally located third semiconductor device bond pads 544, pastoutside faces 503 of the substrate 500, to corresponding contact areasof a second surface 504 of substrate 500. The second surface 504 of thesubstrate 500 opposes the first surface 502 of the substrate 500.

A protective encapsulant 560 maybe placed over substantially all of thesemiconductor device assembly 501, as shown in FIG. 5A, formingsemiconductor package 525. Alternatively, a protective encapsulant 570may be placed over part of the semiconductor device assembly 501, asshown in FIG. 5B, forming semiconductor package 526.

FIGS. 6A and 6B depict additional embodiments of the present invention.A semiconductor device assembly 601 includes three stacked semiconductordevices. A first semiconductor device 630 is attached to a first surface602 of a substrate 600 with an active surface 632 of the firstsemiconductor device 630 facing away from the substrate 600. A secondsemiconductor device 631 is attached in flip-chip configuration to theactive surface 632 of the first semiconductor device 630. An activesurface 638 of the second semiconductor device 631 faces away from thefirst semiconductor device 630. A spacer 85 is positioned on the activesurface 638 of the second semiconductor device 631, separating an activesurface 642 of a third semiconductor device 640 from the active surface638 of the second semiconductor device 631.

The third semiconductor device 640 may be aligned such that bond pads644, peripherally located thereon, are exposed, overhanging the firstsemiconductor device 630, the second semiconductor device 631, and thesubstrate 600. Discrete conductive elements 620 extend from theperipherally located third semiconductor device bond pads 644, pastoutside faces 603 of the substrate 600, to corresponding contact areasof a second surface 604 of substrate 600. The second surface 604 of thesubstrate 600 opposes the first surface 602 of the substrate 600.

A protective encapsulant 660 may be placed over substantially all of thesemiconductor device assembly 601, as shown in FIG. 6A, formingsemiconductor package 625. Alternatively, a protective encapsulant 670may be placed over part of the semiconductor device assembly 601, asshown in FIG. 6B, forming semiconductor package 626.

FIGS. 7A and 7B depict additional embodiments of the present invention.A semiconductor device assembly 701 includes three stacked semiconductordevices. A first semiconductor device 730 is attached to a first surface702 of a substrate 700 with an active surface 732 of the firstsemiconductor device 730 facing away from the substrate 700. A secondsemiconductor device 731 is attached to the active surface 732 of thefirst semiconductor device 730 in flip-chip configuration. An activesurface 738 of the second semiconductor device 731 faces the firstsemiconductor device 730 with conductive bumps 60 disposed therebetween.A redistribution layer on the active surface 732 of the firstsemiconductor device 730 may electrically connect the conductive bumps60 with discrete conductive elements 710, operably coupling the secondsemiconductor device 731 and the substrate 700. Additional discreteconductive elements 710 may operably couple the first semiconductordevice 730 and the substrate 700.

A third semiconductor device 740 is positioned over a back side surface739 of the second semiconductor device 731. The third semiconductordevice 740 may be aligned such that bond pads 744, peripherally locatedthereon, are exposed, overhanging the first semiconductor device 730,the second semiconductor device 731, and the substrate 700. Discreteconductive elements 720 extend from the peripherally located thirdsemiconductor device bond pads 744, past outside faces 703 of thesubstrate 700, to corresponding contact areas of a second surface 704 ofsubstrate 700. The second surface 704 of the substrate 700 opposes thefirst surface 702 of the substrate 700.

A protective encapsulant 760 may be placed over substantially all of thesemiconductor device assembly 701, as shown in FIG. 7A, formingsemiconductor package 725. Alternatively, a protective encapsulant 770may be placed over part of the semiconductor device assembly 701, asshown in FIG. 7B, forming semiconductor package 726.

FIGS. 8A and 8B depict additional embodiments of the present invention.A semiconductor device assembly 801 includes three stacked semiconductordevices. A first semiconductor device 830 is attached to a first surface802 of a first substrate 800 with an active surface 832 of the firstsemiconductor device 830 facing away from the first substrate 800. Asecond substrate 809 is positioned over the first semiconductor device830 in a flip-chip configuration with conductive bumps 60 disposedtherebetween. The second substrate 809 may comprise any suitablesubstrate, interposer, or conductive traces on a dielectric film.Discrete conductive elements 810 may provide electrical connectionbetween the second substrate 809 and the first substrate 800. A secondsemiconductor device 831 is attached to the second substrate 809. Anactive surface of the second semiconductor device 831 faces the secondsubstrate 809 in flip-chip configuration with additional conductivebumps 60 disposed therebetween.

A third semiconductor device 840 is positioned over a back side surface839 of the second semiconductor device 831. The third semiconductordevice 840 may be aligned such that bond pads 844, peripherally locatedthereon, are exposed, overhanging the first semiconductor device 830,the second semiconductor device 831, the second substrate 809, and thefirst substrate 800. Discrete conductive elements 820 extend from theperipherally located second semiconductor device bond pads 844, pastoutside faces 803 of the first substrate 800, to corresponding contactareas of a second surface 804 of substrate 800. The second surface 804of the substrate 800 opposes the first surface 802 of the substrate 800.

A protective encapsulant 860 may be placed over substantially all of thesemiconductor device assembly 801, as shown in FIG. 8A, formingsemiconductor package 825. Alternatively, a protective encapsulant 870may be placed over part of the semiconductor device assembly 801, asshown in FIG. 8B, forming semiconductor package 826.

FIGS. 9A and 9B depict additional embodiments of the present invention.A semiconductor device assembly 901 includes three stacked semiconductordevices. A first semiconductor device 930 is attached to a first surface902 of a substrate 900 in flip-chip configuration. An active surface 932of the first semiconductor device 930 faces the substrate 900 withconductive bumps 60 disposed therebetween. A second semiconductor device931 is attached to a back side surface 933 of the first semiconductordevice 930. An active surface 938 of the second semiconductor device 931faces away from the substrate 900, and a spacer 85 positioned on theactive surface 938 separates the active surface 938 from the activesurface 942 of a third semiconductor device 940. Discrete conductiveelements 910 provide electrical connection between the secondsemiconductor device 931 and the substrate 900.

The third semiconductor device 940 may be aligned such that bond pads944, peripherally located thereon, are exposed, overhanging the firstsemiconductor device 930, the second semiconductor device 931, and thesubstrate 900. Discrete conductive elements 920 extend from theperipherally located third semiconductor device bond pads 944, pastoutside faces 903 of the substrate 900, to corresponding contact areasof a second surface 904 of substrate 900. The second surface 904 of thesubstrate 900 opposes the first surface 902 of the substrate 900.

A protective encapsulant 960 may be placed over substantially all of thesemiconductor device assembly 901, as shown in FIG. 9A, formingsemiconductor package 925. Alternatively, a protective encapsulant 970may be placed over part of the semiconductor device assembly 901, asshown in FIG. 9B, forming semiconductor package 926.

FIGS. 10A and 10B depict additional embodiments of the presentinvention. A semiconductor device assembly 1001 includes three stackedsemiconductor devices. A first semiconductor device 1030 is attached toa first surface 1002 of a substrate 1000 with an active surface 1032 ofthe first semiconductor device 1030 facing the substrate 1000 in a BOCconfiguration. A second semiconductor device 1031 is attached to thefirst semiconductor device 1030. A back surface 1039 of the secondsemiconductor device 1031 faces a back surface 1033 of the firstsemiconductor device 1030. A spacer 85 separates an active surface 1038of the second semiconductor device 1031 from an active surface 1042 of athird semiconductor device 1040, positioned thereon. Discrete conductiveelements 1010 connect the active surface 1038 of the secondsemiconductor device 1031 and the back surface 1033 of the firstsemiconductor device 1030. A RDL 1008 on the back surface 1033 of thefirst semiconductor device 1030 and through-hole vias 1007 within thefirst semiconductor device 1030 may be used to provide electricalcommunication with the active surface 1032 of the first semiconductordevice 1030.

The third semiconductor device 1040 may be aligned such that bond pads1044, peripherally located thereon, are exposed, overhanging the firstsemiconductor device 1030, the second semiconductor device 1031, and thesubstrate 1000. Discrete conductive elements 1020 extend from theperipherally located third semiconductor device bond pads 1044, pastoutside faces 1003 of the substrate 1000, to corresponding contact areasof a second surface 1004 of substrate 1000. The second surface 1004 ofthe substrate 1000 opposes the first surface 1002 of the substrate 1000.

A protective encapsulant 1060 may be placed over substantially all ofthe semiconductor device assembly 1001, as shown in FIG. 10A, formingsemiconductor package 1025. Alternatively, a protective encapsulant 1070may be placed over part of the semiconductor device assembly 1001, asshown in FIG. 10B, forming semiconductor package 1026.

FIGS. 11A and 11B depict additional embodiments of the presentinvention. A semiconductor device assembly 1101 includes three stackedsemiconductor devices. A first semiconductor device 1130 is attached toa first surface 1102 of a substrate 1100 with an active surface 1132 ofthe first semiconductor device 1130 facing the substrate 1100 in a BOCconfiguration. A second semiconductor device 1131 is attached to thefirst semiconductor device 1130 in flip-chip configuration. An activesurface 1138 of the second semiconductor device 1131 faces a backsurface 1133 of the first semiconductor device 1130 with conductivebumps 60 disposed therebetween. A RDL 1108 on the back surface 1133 ofthe first semiconductor device 1130 and through-hole vias 1107 withinthe first semiconductor device 1130 provide electrical communicationwith the active surface 1132 of the first semiconductor device 1130.

A third semiconductor device 1140 is positioned over a back side surface1139 of the second semiconductor device 1131. The third semiconductordevice 1140 may be aligned such that bond pads 1144, peripherallylocated on an active surface 1142 thereof, are exposed, overhanging thefirst semiconductor device 1130, the second semiconductor device 1131,and the substrate 1100. Discrete conductive elements 1120 extend fromthe peripherally located third semiconductor device bond pads 1144, pastoutside faces 1103 of the substrate 1100, to corresponding contact areasof a second surface 1104 of substrate 1100. The second surface 1104 ofthe substrate 1100 opposes the first surface 1102 of the substrate 1100.

A protective encapsulant 1160 may be placed over substantially all ofthe semiconductor device assembly 1101, as shown in FIG. 11A, formingsemiconductor package 1125. Alternatively, a protective encapsulant 1170may be placed over part of the semiconductor device assembly 1101, asshown in FIG. 11B, forming semiconductor package 1126.

FIGS. 12A and 12B depict additional embodiments of the presentinvention. A semiconductor device assembly 1201 includes two stackedsemiconductor devices. A first semiconductor device 1230 is attached toa first surface 1202 of a substrate 1200 with an active surface 1232 ofthe first semiconductor device 1230 facing the substrate 1200. An outerperiphery 1235 of the first semiconductor device 1230 is larger than anouter periphery 1205 of the substrate 1200. Bond pads 1234, peripherallylocated on the first semiconductor device active surface 1232 overhangthe substrate 1200. Discrete conductive elements 1210 connect the firstsemiconductor device bond pads 1234 with a second surface 1204 of thesubstrate 1200. The second surface 1204 of the substrate 1200 opposesthe first surface 1202 of the substrate 1200.

A second semiconductor device 1240 is positioned over the firstsemiconductor device 1230. An active surface 1242 of the secondsemiconductor device 1240 faces a back surface 1233 of the firstsemiconductor device 1230. The second semiconductor device activesurface 1242 has an outer periphery 1245 greater than the firstsemiconductor device outer periphery 1235 or the substrate outerperiphery 1205. The second semiconductor device 1240 may be aligned suchthat bond pads 1244, peripherally located thereon, are exposed,overhanging the first semiconductor device 1230 and the substrate 1200.Discrete conductive elements 1220 extend from the peripherally locatedsecond semiconductor device bond pads 1244, past outside faces 1203 ofthe substrate 1200, to corresponding contact areas of the second surface1204 of substrate 1200.

A protective encapsulant 1260 may be placed over substantially all ofthe semiconductor device assembly 1201, as shown in FIG. 12A, formingsemiconductor package 1225. Alternatively, a protective encapsulant 1270may be placed over part of the semiconductor device assembly 1201, asshown in FIG. 12B, forming semiconductor package 1226.

FIG. 15 is a block diagram of an electronic system, in accordance withan embodiment of the present invention. The electronic system 1500includes an input device 1510, an output device 1520, and a circuitboard 1540, all coupled to a processor device 1530. The circuit board1540 includes at least one semiconductor package 125, 126, 225, 226,325, 326, 425, 426, 525, 526, 625, 626, 725 726, 825, 826, 925, 926,1025, 1026, 1125, 1126, 1225, 1226 of one or more of the precedingembodiments of the present invention mounted thereto.

Although the foregoing description contains many specifics, these shouldnot be construed as limiting the scope of the present invention, butmerely as providing illustrations of some exemplary embodiments.Similarly, other embodiments of the invention may be devised that do notdepart from the spirit or scope of the present invention. Features fromdifferent embodiments may be employed in combination. The scope of theinvention is, therefore, indicated and limited only by the appendedclaims and their legal equivalents, rather than by the foregoingdescription. All additions, deletions, and modifications to theinvention, as disclosed herein, which fall within the meaning and scopeof the claims are to be embraced thereby.

1. A semiconductor device assembly comprising: a substrate having afirst surface, a second, opposing surface, and at least one side surfaceadjacent to the first surface and the second, opposing surface; a firstsemiconductor device disposed on the first surface of the substrate; afirst plurality of discrete conductive elements operably coupled to thefirst semiconductor device and the substrate; a second semiconductordevice disposed over the first semiconductor device, the secondsemiconductor device having an active surface facing the firstsemiconductor device; and a second plurality of discrete conductiveelements operably coupled to the second semiconductor device activesurface and the substrate second, opposing surface, at least a portionof some of the second plurality of discrete conductive elementsextending beyond the at least one side surface of the substrate.
 2. Thesemiconductor device assembly of claim 1, wherein the secondsemiconductor device active surface has a surface area larger than asurface area of an active surface of the first semiconductor device. 3.The semiconductor device assembly of claim 2, wherein the surface areaof the second semiconductor device active surface is larger than asurface area of the first surface of the substrate.
 4. The semiconductordevice assembly of claim 1, wherein the second semiconductor deviceactive surface has a perimeter longer than a perimeter of an activesurface of the first semiconductor device.
 5. The semiconductor deviceassembly of claim 4, wherein the perimeter of the second semiconductordevice active surface is longer than a perimeter of the first surface ofthe substrate.
 6. The semiconductor device assembly of claim 1, whereinthe second plurality of discrete conductive elements comprises bondwires.
 7. The semiconductor device assembly of claim 1, wherein thesecond semiconductor device includes bond pads peripherally located onthe active surface thereof.
 8. The semiconductor device assembly ofclaim 1, wherein the first semiconductor device includes an activesurface facing the substrate first surface.
 9. The semiconductor deviceassembly of claim 8, wherein the first semiconductor device includesbond pads centrally located on the active surface thereof.
 10. Thesemiconductor device assembly of claim 9, wherein the first plurality ofdiscrete conductive elements comprise bond wires extending through aslot in the substrate.
 11. The semiconductor device assembly of claim 8,wherein the first plurality of discrete conductive elements compriseconductive bumps.
 12. The semiconductor device assembly of claim 8,wherein the first plurality of discrete conductive elements comprisebond wires extending from a plurality of peripherally located bond padsof the first semiconductor device.
 13. The semiconductor device assemblyof claim 12, wherein the first semiconductor device active surface has asurface area larger than a surface area of the first surface of thesubstrate.
 14. The semiconductor device assembly of claim 12, wherein atleast a portion of some of the first plurality of discrete conductiveelements extend beyond the at least one side surface of the substrate.15. The semiconductor device assembly of claim 1, wherein the firstsemiconductor device includes a back side surface facing the substratefirst surface.
 16. The semiconductor device assembly of claim 15,further comprising a spacer positioned between the first semiconductordevice and the second semiconductor device.
 17. The semiconductor deviceassembly of claim 1, further comprising an encapsulant surrounding atleast a portion of the second semiconductor device, and substantiallyentirely surrounding the first semiconductor device and the secondplurality of discrete conductive elements.
 18. The semiconductor deviceassembly of claim 1, further comprising an encapsulant surroundingsubstantially entirely the first semiconductor device, the secondsemiconductor device, and the second plurality of discrete conductiveelements.
 19. The semiconductor device assembly of claim 1, furthercomprising at least one central semiconductor device, positioned betweenthe first semiconductor device and the second semiconductor device. 20.The semiconductor device assembly of claim 19, further comprising atleast one spacer positioned between the at least one centralsemiconductor device and the second semiconductor device.
 21. Thesemiconductor device assembly of claim 20, further comprising at leastone spacer positioned between the at least one central semiconductordevice and the first semiconductor device.
 22. The semiconductor deviceassembly of claim 20, further comprising a third plurality of discreteconductive elements operably coupled to the central semiconductor deviceand the substrate.
 23. The semiconductor device assembly of claim 20,further comprising a third plurality of discrete conductive elementsoperably coupled to a redistribution layer on an active surface of thefirst semiconductor device and the central semiconductor device.
 24. Thesemiconductor device assembly of claim 20, further comprising: a thirdplurality of discrete conductive elements operably coupled to aredistribution layer on a back side surface of the first semiconductordevice and the central semiconductor device; and a plurality of throughhole vias within the first semiconductor device operably coupled to theredistribution layer.
 25. The semiconductor device assembly of claim 19,further comprising a plurality of conductive bumps operably coupled toan active surface of the central semiconductor device and aredistribution layer on an active surface of the first semiconductordevice, the redistribution layer operably coupled to at least some ofthe first plurality of discrete conductive elements.
 26. Thesemiconductor device assembly of claim 19, further comprising: aplurality of conductive bumps operably coupled to an active surface ofthe central semiconductor device and a redistribution layer on a backside surface of the first semiconductor device; and a plurality ofthrough hole vias within the first semiconductor device operably coupledto the redistribution layer.
 27. The semiconductor device assembly ofclaim 1, further comprising at least one interconnect bump positioned onthe second, opposing surface of the substrate, enabling electricalcommunication with external circuitry.
 28. A semiconductor deviceassembly comprising: a first substrate having a first surface, a second,opposing surface, and at least one side surface adjacent to the firstsurface and the second, opposing surface; a first semiconductor devicedisposed on the first surface of the first substrate; a second substratepositioned on the first semiconductor device; a first plurality ofconductive bumps operably coupled to the first semiconductor device andthe second substrate; a central substrate operably coupled to the secondsubstrate with a second plurality of conductive bumps; a secondsemiconductor device disposed over the first semiconductor device, thesecond semiconductor device having an active surface facing the firstsemiconductor device; and a plurality of discrete conductive elementsoperably coupled to the second semiconductor device active surface andthe first substrate second surface, at least a portion of some of thesecond plurality of discrete conductive elements extending beyond the atleast one side surface of the substrate.
 29. A stacked semiconductorassembly comprising: a substrate having a first surface, a second,opposing surface, and at least one side surface adjacent to the firstsurface and the second, opposing surface; a first semiconductor devicedisposed on the first surface of the substrate; a first plurality ofdiscrete conductive elements operably coupled to the first semiconductordevice and the substrate; a second semiconductor device disposed overthe first semiconductor device, the second semiconductor device havingan active surface facing the first semiconductor device, at least aportion of the second semiconductor device active surface overhangingboth the substrate and the first semiconductor device; and a secondplurality of discrete conductive elements operably coupled to the atleast a portion of the second semiconductor device active surface andthe substrate second, opposing surface.
 30. An electronic systemincluding an input device, an output device, a circuit board, and aprocessor device coupled to the input and output devices, and thecircuit board, the circuit board including a semiconductor deviceassembly comprising: a substrate having a first surface, a second,opposing surface, and at least one side surface adjacent to the firstsurface and the second, opposing surface; a first semiconductor devicedisposed on the first surface of the substrate; a first plurality ofdiscrete conductive elements operably coupled to the first semiconductordevice and the substrate; a second semiconductor device disposed overthe first semiconductor device, the second semiconductor device havingan active surface facing the first semiconductor device; and a secondplurality of discrete conductive elements operably coupled to the secondsemiconductor device active surface and the substrate second surface, atleast a portion of some of the second plurality of discrete conductiveelements extending beyond the at least one side surface of thesubstrate.